P. J. Wheeler, Ruoyu Chen, and D. Natelson, "Noise in electromigrated nanojunctions", Phys. Rev. B 87, 155411 (2013).

J. B. Herzog, M. W. Knight, Y. Li, K. M. Evans, N. J. Halas, and D. Natelson, "Dark plasmons in hot spot generation and polarization in interelectrode nanoscale junctions", Nano Lett. 13, 1359-1364 (2013).

D. Natelson, Y. Li, and J. B. Herzog, "Nanogap structures: combining enhanced Raman spectroscopy and electronic transport", Phys. Chem. Chem. Phys. 15, 5262-5275 (2013). For a special themed issue on plasmonics.

J. Lin, C. Zhang, Z. Yan, Y. Zhu, Z. Peng, R. H. Hauge, D. Natelson, and J. M. Tour, "3-Dimensional graphene carbon nanotube carpet-based microsupercapacitors with high electrochemical performance", Nano Lett. 13, 72-78 (2013).

J. Yao, J. Lin, Y. Dai, G. Ruan, Z. Yan, L. Li, L. Zhong, D. Natelson, and J. M. Tour, "Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene", Nature Comms. 3, 1101 (2012).

E. Morosan, D. Natelson, A. H. Nevidomskyy, and Q. M. Si, "Strongly Correlated Materials", Adv. Mater. 24, 4896-4923 (2012). Invited contribution for special centennial issue on materials research at Rice University.

N. J. Halas, S. Lal, S. Link, W.-S. Chung, D. Natelson, J. H. Hafner, and P. Nordlander, "A plethora of plasmonics from the Laboratory for Nanophotonics at Rice University", Adv. Mater. 24, 4842-4877 (2012). Invited contribution for special centennial issue on materials research at Rice University.

R. Chen, P. J. Wheeler, and D. Natelson, "Excess noise in STM-style break junctions at room temperature", Phys. Rev. B 85, 235455 (2012).

H. Ji, J. Wei, and D. Natelson, "Modulation of the electrical properties of VO₂ nanobeams using an ionic liquid as a gating medium", Nano Lett. 12, 2988-2992 (2012).

J. Wei, H. Ji, W. Guo, A. Nevidomskyy, and D. Natelson, "Hydrogen stabilization of metallic VO₂ in single-crystal nanobeams", Nature Nano. 7, 357-362 (2012).

D. Natelson, "Mechanical break junctions: Enormous information in a nanoscale package", ACS Nano 6, 2871-2876 (2012).

J. Yao, L. Zhong, D. Natelson, and J. M. Tour, "In situ imaging of the conducting filament in a silicon oxide resistive switch", Nature Scientific Reports 2, 242 (2012).

J. H. Worne, H. Gullapalli, C. Galande, P. M. Ajayan, and D. Natelson, "Local charge transfer doping in suspended graphene nanojunctions", Appl. Phys. Lett. 100, 023306 (2012).

A. A. Fursina, R. G. S. Sofin, I. V. Shvets, and D. Natelson, "Statistical distribution of the electric field driven switching of the Verwey state in Fe₃O₄", New Journal of Physics 14, 013019 (2012).

D. Natelson and M. Di Ventra, "Ion motion and electrochemistry in nanostructures", MRS Bulletin 36(11), 914-920 (2011).

D. Natelson, D. R. Ward, F. Hueser, F. Pauly, J. C. Cuevas, D. A. Corley, and J. M. Tour, "Plasmons in nanoscale metal junctions: optical rectification and thermometry", Proceedings of the SPIE (Optics+Photonics 2011) 8096, 80961O (2011).

J. Wei and D. Natelson, "Nanostructure studies of strongly correlated materials", Nanoscale 3, 3509-3521 (2011). (available as pdf here).

A. Garcia-Martin, D. R. Ward, D. Natelson, and J. C. Cuevas, "Field enhancement in subnanometer metallic gaps", Phys. Rev. B 83, 193404 (2011).

J. Yao, L. Zhong, D. Natelson, and J. M. Tour, "Intrinsic resistive switching and memory effects in silicon oxide", Appl. Phys. A 102, 835-839 (2011).

J. Yao, L. Zhong, D. Natelson, and J. M. Tour, "Silicon oxide is a non-innocent surface for molecular electronics and nanoelectronics studies", J. Am. Chem. Soc. 133, 941-948 (2011).

A. A. Fursina, R. G. S. Sofin, I. V. Shvets, and D. Natelson, "Interfacial transport properties between a strongly correlated transition metal oxide and a metal: Contact resistance in Fe₃O₄/M (M=Cu, Au, Pt) nanostructures", Phys. Rev. B. 82, 245112 (2010).

D. R. Ward, D. A. Corley, J. M. Tour, and D. Natelson, "Vibrational and electronic heating in nanoscale junctions", Nature Nano. 6, 33-38 (2011).

D. R. Ward, F. Hueser, F. Pauly, J. C. Cuevas, and D. Natelson, "Optical rectification and field enhancement in a plasmonic nanogap", Nature Nano. 5, 732-736 (2010).

J. Yao, Z. Sun, L. Zhong, D. Natelson, and J. M. Tour, "Resistive switches and memories from silicon oxide", Nano Lett. 10, 4105-4110 (2010).

D. Natelson, "Carrier Characteristics", Nature Materials 9, 703-704 (2010).

J. H. Worne, J. E. Anthony, and D. Natelson, "Transport in organic semiconductors in large electric fields: From thermal activation to field emission", Appl. Phys. Lett. 96, 053308 (2010).

P. J. Wheeler, J. N. Russom, K. Evans, N. S. King, and D. Natelson, "Shot noise suppression at room temperature in atomic-scale Au contacts", Nano Lett. 10, 1287-1292 (2010).

A. A. Fursina, R. G. S. Sofin, I. V. Shvets, and D. Natelson, "Interplay of bulk and interface effects in the electric field driven transition in magnetite", Phys. Rev. B 81, 045123 (2010).

G. D. Scott, J. J. Palacios, and D. Natelson, "Anomalous transport and possible phase transition in Pd nanojunctions", ACS Nano 4, 2831-2837 (2010).

G. D. Scott and D. Natelson, "Kondo resonances in molecular devices", ACS Nano 4, 3560-3579 (2010).

A. Sinitskii, A. A. Fursina, D. Kosynkin, A. Higginbotham, D. Natelson, and J. M. Tour, "Electronic transport in monolayer graphene nanoribbons produced by chemical unzipping of carbon nanotubes", Appl. Phys. Lett. 95, 253108 (2009).

J. Yao, J. Zhong, L. Zhong, D. Natelson, and J. M. Tour, "Two-terminal nonvolatile memories based on single-walled carbon nanotubes", ACS Nano 3, 4122-4126 (2009).

J. Yao, L. Zhong, Z. Zhang, T. He, Z. Jin, P. J. Wheeler, D. Natelson, and J. M. Tour, "Resistive switching in nanogap systems on SiO₂ substrates", Small 5, 2910-2915 (2009).

D. Natelson, "Correlated electron systems: better than average", Nature Nano. 4, 406-407 (2009).

D. Natelson, "Towards the ultimate transistor", Physics World 22, 27-31 (2009). Also re-published in abridged form in Compound Semiconductor magazine.

A. A. Fursina, R. G. S. Sofin, I. V. Shvets, and D. Natelson "The origin of hysteresis in resistive switching in magnetite is Joule heating", Phys. Rev. B 79, 245131 (2009)

G. D. Scott, Z. K. Keane, J. W. Ciszek, J. M. Tour, and D. Natelson. "Universal scaling of nonequilibrium transport in the Kondo regime of single molecule devices", Phys. Rev. B 79, 165413 (2009)

M. R. Calvo, J. Fernandez-Rossier, J. J. Palacios, D. Jacob, D. Natelson, and C. Untiedt. "The Kondo Effect in ferromagnetic atomic contacts", Nature 458, 1150-1153 (2009).

J. Yao, L. Zhong, D. Natelson, and J. M. Tour. "Etching-dependent reproducible memory switching in vertical SiO₂ structures", Appl. Phys. Lett. 93, 253101 (2008).

D. R. Ward, N. J. Halas, and D. Natelson. "Localized heating in nanoscale Pt constrictions measured using blackbody radiation emission", Appl. Phys. Lett. 93, 213108 (2008).

J. H. Worne, R. Giridharagopal, K. F. Kelly, and D. Natelson. "Interfacial charge transfer in nanoscale polymer transistors", Nano Research 1, 341-350 (2008).

D. Natelson, L. H. Yu, Z. K. Keane, J. W. Ciszek, and J. M. Tour, "Anomalous gate dependence of the Kondo effect in single-molecule transistors", Physica B, 403 1526-1528 (2008). (Proceedings of SCES 2007).

D. R. Ward, G. D. Scott, Z. K. Keane, N. J. Halas, and D. Natelson, "Electronic and optical properties of electromigrated molecular junctions", J. Phys: Condens. Matter 20, 374118 (2008). (Invited, Special issue: Conductivity of single molecules and supramolecular architectures.)

A. Fursina, S. Lee, R. G. S. Sofin, I. V. Shvets, and D. Natelson, "Nanogaps with very large aspect ratios for electrical measurements", Appl. Phys. Lett. 92, 113102 (2008).

D. R. Ward, N. J. Halas, J. W. Ciszek, J. M. Tour, Y. Wu, P. Nordlander, and D. Natelson, "Simultaneous measurements of electronic conduction and Raman response in molecular junctions", Nano Lett. 8, 919-924 (2008).

S. Lee, A. Fursina, J. T. Mayo, C. T. Yavuz, V. L. Colvin, R. G. S. Sofin, I. V. Shvets, and D. Natelson, "Electrically-driven phase transition in magnetite nanostructures", Nature Materials, 7, 130-133 (2008)

D.R. Ward, N.K. Grady, C.S. Levin, N.J. Halas, Y. Wu, P. Nordlander, and D. Natelson, "Electromigrated nanoscale gaps for surface-enhanced Raman spectroscopy ", Nano Lett. 7, 1396-1400 (2007).

A. Trionfi, S. Lee, and D. Natelson, "Time-dependent universal conductance fluctuations in mesoscopic Au wires: implications", Phys. Rev. B 75, 104202 (2007).

S. Lee, A. Trionfi, T. Schallenberg, H. Munekata, and D. Natelson, "Quantum coherence in ferromagnetic semiconductors: time-dependent universal conductance fluctuations and magnetofingerprint", Appl. Phys. Lett. 90, 032105 (2007).

A. Trionfi, S. Lee, and D. Natelson, "Strong magnetic scattering from TiOx adhesion layers" , Appl. Phys. Lett. 89, 262104 (2006).

C.T. Yavuz, J.T. Mayo, W.W. Wu, A. Prakash, J.C. Falkner, S. Yean, L. Cong, H.J. Shipley, A. Kan, M. Tomson, D. Natelson, and V.L. Colvin, "Low-field magnetic separation of monodisperse Fe3O4 nanocrystals", Science 314, 964-967 (2006).

D. Natelson, "Nanofabrication: best of both worlds", Nature Materials 5, 853-854 (2006).

D. Natelson, B.H. Hamadani, J.W. Ciszek, D.A. Corley, and J.M. Tour,"Contact effects in polymer field-effect transistors", also cond-mat/0607744, Proceedings of the SPIE 6336, 63360M (2006).

C.H. Ahn, A. Bhattacharya, M. Di Ventra, J.N. Eckstein, C. Daniel Frisbie, M.E. Gershenson, A.M. Goldman, I.H. Inoue, J. Mannhart, A.J. Millis, A.F. Morpurgo, D. Natelson, and J.-M. Triscone, "Electrostatic modification of novel materials", Rev. Mod. Phys. 78, 1185-1212 (2006)

Z.K. Keane, J.W. Ciszek, J.M. Tour, and D. Natelson, "Three-terminal devices to examine single molecule conductance switching", Nano Lett., 6, 1518-1521 (2006).

B.H. Hamadani, D.A. Corley, J.W. Ciszek, J.M. Tour, and D. Natelson, "Controlling charge injection in organic field-effect transistors using self-assembled monolayers", Nano Lett., 6, 1303-1306 (2006).

J.W. Ciszek, Z.K. Keane, L. Cheng, M.P. Stewart, L.H. Yu, D. Natelson, and J.M. Tour, "Neutral complexes of first row transition metals bearing unbound thiocyanates and their assembly on metallic surfaces", J. Am. Chem. Soc., 128, 3179-3189 (2006).

Z.K. Keane and D. Natelson, "Magnetoresistance of atomic-scale electromigrated nickel nanocontacts", Appl. Phys. Lett. 88, 062514 (2006).

D. Natelson, "Single-molecule transistors", a review chapter in the Handbook of Organic Electronics and Photonics, H.S. Nalwa, ed., American Scientific Publishers, pp. 1-49 (2007). Contact Prof. Natelson if you would like a copy.

B.H. Hamadani, H. Ding, Y. Gao, and D. Natelson, "Doping-dependent charge injection and band alignment in organic field-effect transistors", Phys. Rev. B. 72, 235302 (2005).

D. Natelson, L.H. Yu, J. W. Ciszek, Z.K. Keane, and J.M. Tour, "Single-molecule transistors: electron transfer in the solid state", Chemical Physics 324, 267-275 (2006).

S. Kirchner, L. Zhu, Q.M. Si, and D. Natelson, "Quantum criticality in ferromagnetic single-electron transistors", PNAS 102, 18824-18829 (2005).

L.H. Yu, Z.K. Keane, J.W. Ciszek, L. Cheng, J.M. Tour, T. Baruah, M.R. Pederson, and D. Natelson, "Strong Kondo physics and anomalous gate dependence in single-molecule transistors", Phys. Rev. Lett. 95, 256803 (2005). Supplementary material available here.

B.H. Hamadani and D. Natelson, "Extracting contact effects in organic field-effect transistors", Proc. IEEE 93, 1306-1311 (2005).

A. Trionfi, S. Lee, and D. Natelson, "Time-dependent universal conductance fluctuations and coherence in AuPd and Ag", Phys. Rev. B. 72, 035407 (2005).

B.H. Hamadani and D. Natelson, "Nonlinear charge injection in organic field-effect transistors", J. Appl. Phys. 97, 064508 (2005).

L.H. Yu, Z.K. Keane, J.W. Ciszek, L. Cheng, M.P. Stewart, J.M. Tour, and D. Natelson, "Inelastic electron tunneling via molecular vibrations in single-molecule transistors", Phys. Rev. Lett. 93, 266802 (2004).

S. Lee, A. Trionfi, and D. Natelson, "Quantum coherence in a ferromagnetic metal: time-dependent conductance fluctuations", Phys. Rev. B 70, 212407 (2004).

A. Trionfi, S. Lee, and D. Natelson, "Electronic coherence in metals: comparing weak localization and time-dependent conductance fluctuations", Phys. Rev. B 70, 041304(R) (2004).

L.H.Yu and D. Natelson, "Transport in single-molecule transistors: Kondo physics and negative differential resistance", Nanotechnology 15, S517-S524 (2004).

L.H. Yu and D. Natelson, "Kondo physics in C₆₀ Single-Molecule Transistors", Nano Letters 4, 79-83 (2004).

B.H. Hamadani and D. Natelson, "Temperature-dependent contact resistances in high quality polymer field-effect transistors", Appl. Phys. Lett. 84, 443-445 (2004).

B.H. Hamadani and D. Natelson, "Gated nonlinear transport in polymer field effect transistors", J. Appl. Phys. 95, 1227-1232 (2004).

L.H. Yu and D. Natelson, "Density of states and magnetoconductance of disordered Au point contacts, Phys. Rev. B 68, 113407 (2003).

L.H. Yu and D. Natelson, "Zero bias anomalies in electrochemically fabricated nanojunctions, Appl. Phys. Lett. 82, 2332-2334 (2003).

D. Natelson, "Fabrication of metal nanowires", (invited book chapter), in Recent Research Developments in Vacuum Science and Technology 4, J. Dabrowski, ed., Research Signpost, Kerala, India (2003).

D. Natelson, R.L. Willett, L.N. Pfeiffer, K.W. West, "Geometry-dependent dephasing in small metallic wires", Phys. Rev. Lett. 86, 1821-1824 (2001)

D. Natelson, R.L. Willett, L.N. Pfeiffer, K.W. West, "Molecular-scale metal wires", Sol. State Comm. 115, 269-273 (2000).

D. Natelson, R.L. Willett, L.N. Pfeiffer, K.W. West, "Fabrication of extremely narrow metal wires", Appl. Phys. Lett., 77, 1991-1993 (2000).